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TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number or Voltage
Test # [V]
61 IXGQ240N30PB SK0631 240
62 IXGQ240N30PB SK0631 240
63 IXGQ240N30PB SK0631 240
64 IXGQ70N33TB SK0650 264
65 IXGQ85N33PCD1 SK0613 264
66 IXGQ85N33PCD1 SK0638 264
67 IXGQ86N30PB K0543 240
68 IXGQ90N27PB SK0621 216
69 IXGQ90N27PB SK0640 216
70 IXGQ90N30TCD1 SK0631 240
71 IXGQ90N33TC SK0649 264
72 IXGQ90N33TCD1 SK0639 264
73 IXGQ90N33TCD1 SK0728 264
74 IXGR120N60C2 SP0722 480
75 IXGR48N60C3D1 SP0722 480
76 IXGX120N60B SP0719 480
77 IXGX72N60B3H1 SP0739 480
78 IXKC13N80C 1769 640
79 IXKC25N80C 1590 640
80 IXKH20N60C5 1631 480
81 IXKH35N60CS 1984 480
82 IXKH35N60CS 1986 480
83 IXKP10N60C5M 1693 480
84 IXKP13N60C5M 1716 480
85 IXKP20N60C5 1653 480
86 IXKP24N60C5 1671 480
87 IXKR25N80C 1521 640
88 IXKT70N60C5 2068 480
89 IXSH30N60B2D1 SP0506 480
90 IXSK40N60CD1 SK0722 480
91 IXTA36N30P SK0603 240
92 IXTA36N30P K0621 240
93 IXTA36N30P K640 240
94 IXTA50N25T K545 200
95 IXTA50N28T K0606 224
96 IXTA50N28T K634 224
97 IXTA50N28T K640 224
98 IXTA60N20T K545 160
99 IXTA60N20T SK0601 160
100 IXTA75N10P K0531 80
101 IXTA76N25T K0704 200
102 IXTC110N25T SP0721 200
103 IXTC200N075T SP0627 60
104 IXTH130N20T SP0721 160
105 IXTH150N17T SK0718 140
106 IXTH160N15T SK0721 120
107 IXTH1N80P TP0604 640
108 IXTH30N50L TK0738 400
109 IXTH3N100P TP0639 800
110 IXTH76N25T SP0613 200
111 IXTH86N25T SP0638 200
112 IXTH8P50 SK0712 400
113 IXTK180N15P SP0552 120
114 IXTK34N80 SP0546 640
115 IXTK34N80 SP0603 640
116 IXTK34N80 SP0603 640
117 IXTP08N100P K625 800
118 IXTP08N120P K0709 960
119 IXTP14N60PM K631 480
120 IXTP14N60PM K643 480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
150
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
168
1000
1000
1000
800
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
27
30
30
30
30
30
30
30
30
30
30
30
30
20
20
20
20
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
27000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
20000
20000
20000
3360
3360
20000
20000
20000
16000
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
25000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
no deviations after 168h
IXYS Semiconductor GmbH
6
发布紧急采购，3分钟左右您将得到回复。
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相关代理商/技术参数
IXTQ30N50L
功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50L2
功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50P
功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60L2
功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60P
功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N20T
功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N30P
功能描述:MOSFET 36 Amps 300V 0.11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N50P
功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube